Author:
Abdulnassir Rabiya,Singh Avtar,Tekilu Dereje,Subarao Gangiregula,Chanda Manash
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Instrumentation
Reference28 articles.
1. Moore, B. G. E. (1975). Cramming more components onto integrated circuits. Proceedings of the IEEE., 86(1), 82–85.
2. Turkane, S. M., & Kureshi, A. K. (2016). Review of tunnel field effect transistor (TFET). International Journal of Applied Engineering Research,11(7), 4922–4929.
3. Abdi, D. B., & Kumar, M. J. (2015). Superlattices and microstructures dielectric modulated overlapping gate-on-drain tunnel-FET as a label-free biosensor. Superlattices and Microstructures,86, 198–202. https://doi.org/10.1016/j.spmi.2015.07.052
4. Rahimian, M., & Fathipour, M. (2017). Improvement of electrical performance in junctionless nanowire TFET using hetero-gate-dielectric. Materials Science in Semiconductor Processing,63, 142–152. https://doi.org/10.1016/j.mssp.2016.12.011
5. Singh, A., Chaudhury, S., Pandey, C. K., Sharma, S. M., & Sarkar, C. K. (2019). Design and analysis of high k silicon nanotube tunnel FET device. IET Circuits, Devices and Systems,13(8), 1305–1310. https://doi.org/10.1049/iet-cds.2019.0230
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献