An analytical drain current model for cylindrical gate DMG-GC-DOT MOSFET-Reference-Cited by-同舟云学术

An analytical drain current model for cylindrical gate DMG-GC-DOT MOSFET

Published:2018-11-02 Issue:4 Volume:7 Page:458-472
ISSN:2168-1724
Container-title:International Journal of Electronics Letters
language:en
Short-container-title:International Journal of Electronics Letters

Author:

Jaafar H.¹,Aouaj A.¹,Bouziane A.¹,Iñiguez B.²

Affiliation:

1. Laboratory of Automatic, Conversion of Energy and Microelectronics, Team: Automatic, Microelectronics and Nanotechnology, Faculty of Science and Technology, University Sultan Moulay Slimane, Beni Mellal, Morocco

2. Department of Electronic, Electrical and Automatic Control Engineering, Universitat Rovira i Virgili, Tarragona, Spain

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Instrumentation,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/21681724.2018.1540058

Reference14 articles.

1. Analytical 2D modeling for potential distribution and threshold voltage of the short channel fully depleted cylindrical/surrounding gate MOSFET

2. Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate

3. Reliability Comparison of Triple-Gate Versus Planar SOI FETs

4. Analytical approach of a nanoscale triple-material surrounding gate (TMSG) MOSFETs for reduced short-channel effects

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