Analytical 2D modeling for potential distribution and threshold voltage of the short channel fully depleted cylindrical/surrounding gate MOSFET
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/08827510412331314412
Reference7 articles.
1. Analytical two-dimensional modeling for potential distribution and threshold voltage of the short-channel fully depleted SOI (silicon-on-insulator) MOSFET
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