An Analytical Drain Current Model for Dual-material Gate Graded - channel and Dual-oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET-Reference-Cited by-同舟云学术

An Analytical Drain Current Model for Dual-material Gate Graded - channel and Dual-oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET

Published:2019-06-25 Issue:2 Volume:9 Page:291-297
ISSN:2210-6812
Container-title:Nanoscience &Nanotechnology-Asia
language:en
Short-container-title:NANOASIA

Author:

Jaafar Hind¹,Aouaj Abdellah¹,Bouziane Ahmed¹,Iñiguez Benjamin²

Affiliation:

1. Faculty of Science and Technology, Laboratory of Automatic, Conversion of Energy and Microelectronics, University Sultan Moulay Slimane, Beni Mellal, Morocco

2. Department of Electronic, Electrical and Automatic Control Engineering, Universitat Rovira i Virgili, Av Paisos Catalans 26, Tarragona, 43007, Spain

Abstract

Background: A novel Dual Material Gate Graded Channel and Dual Oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET is presented in this paper. Methods: Analytical model of drain current is developed using a quasi-two-dimensional cylindrical form of the Poisson equation and is expressed as a function of the surface potential, which is calculated using the expressions of the current density. Results: Comparison of the analytical results with 3D numerical simulations using Silvaco Atlas - TCAD software presents a good agreement from subthreshold to strong inversion regime and for different bias voltages. Conclusion: Two oxide thicknesses with different permittivity can effectively improve the subthreshold current of DMG-GC-DOT MOSFET.

Publisher

Bentham Science Publishers Ltd.

Subject

General Engineering,General Materials Science

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