Impact of Drain Underlap and High Bandgap Strip on Cylindrical Gate All Around Tunnel FET and its Influence on Analog/RF Performance
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01692-w.pdf
Reference33 articles.
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2. Kim S et al (2020) Investigation of electrical characteristic behavior induced by channel-release process in stacked nanosheet gate-all-around MOSFETs. IEEE Trans Electron Devices 67:2648–2652. https://doi.org/10.1109/TED.2020.2989416
3. Saxena RS, Kumar MJ (2009) Stepped oxide hetero-material gate trench power MOSFET for improved performance. IEEE Trans Electron Devices 56:1355–1359. https://doi.org/10.1109/TED.2009.2019371
4. Jaafar H, Aouaj A, Bouziane A, Iniguez B (2019) An analytical drain current model for cylindrical gate DMG-GC-DOT MOSFET. Int J Electron Lett 7:458–472. https://doi.org/10.1080/21681724.2018.1540058
5. Wu J, Min J, Taur Y (2015) Short-channel effects in tunnel FETs. IEEE Trans Electron Devices 62:3019–3024. https://doi.org/10.1109/TED.2015.2458977
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