Author:
Upadhyay Abhishek Kumar,Reniwal Bhupendra Singh,Rahi Shiromani Balmukund,Beohar Ankur
Publisher
Springer Nature Singapore
Reference16 articles.
1. Upadhyay K, Rahi SB, Tayal S, Song YS. Recent progress on negative capacitance tunnel FET for low-power applications: device perspective. Microelectron J. 2022;129:105583.
2. Upadhyay AK, Gupta D, Mathew R, Beohar A. A compact model of the backscattering coefficient and mobility of a graphene FET for SiO2 and h-BN substrates. J Comput Electron. 2022;22:88–95.
3. Tayal S, Kumar Upadhyay A, Kumar D, Rahi SB. Emerging low-power semiconductor devices. Boca Raton: CRC Press; 2022.
4. Song YS, Tayal S, Rahi SB, Kim JH, Upadhyay AK, Park B-G. Thermal-aware IC chip design by combining high thermal conductivity materials and GAA MOSFET. In: 2022 5th international conference on circuits, systems and simulation (ICCSS), May 2022.
5. Rahi SB, Tayal S, Upadhyay AK. A review on emerging negative capacitance field effect transistor for low power electronics. Microelectron J. 2021;116:105242.