Quasi-analytical model-based performance analysis of dual material gate stack strained GAA FinFET-Reference-Cited by-同舟云学术

Quasi-analytical model-based performance analysis of dual material gate stack strained GAA FinFET

Published:2019-04-18 Issue:3 Volume:8 Page:304-318
ISSN:2168-1724
Container-title:International Journal of Electronics Letters
language:en
Short-container-title:International Journal of Electronics Letters

Author:

Shora Aadil T.¹,Khanday Farooq A.¹^ORCID

Affiliation:

1. Department of Electronics and Instrumentation, University of Kashmir, Srinagar, India

Funder

Ministry of Electronics and Information Technology (MEITy), Govt. of India

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Instrumentation,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/21681724.2019.1600729

Reference31 articles.

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2. 3-D Analytical Modeling of Dual-Material Triple-Gate Silicon-on-Nothing MOSFET

3. Chu, J. O., Cobb, M. A., Saunders, P. A. & Shi, L. (2004). US7235812B2. Method of creating defect free high Ge content (>25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques.

4. 3D transistors

5. Investigation of the performance of strained-SiGe vertical IMOS-transistors

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