Performance and analytical modelling of halo-doped surrounding gate MOSFETs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference25 articles.
1. Scaling theory for double-gate SOI MOSFET's
2. Analytical models for n/sup +/-p/sup +/ double-gate SOI MOSFET's
3. Pi-Gate SOI MOSFET
4. Impact of surrounding gate transistor (SGT) for ultra-high-density LSI's
5. Multi-pillar surrounding gate transistor (M-SGT) for compact and high-speed circuits
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1. Compact Modeling of Schottky Gate-all-around Silicon Nanowire Transistors with Halo Doping;Silicon;2021-01-25
2. A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs;Chinese Physics B;2014-03
3. Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate;Chinese Physics B;2014-01
4. Two-dimensional analytical model of dual material gate strained Si SOI MOSFET with asymmetric Halo;Acta Physica Sinica;2013
5. Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor;Acta Physica Sinica;2013
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