Analytical Modeling and Simulation of Gate-All-Around Junctionless Mosfet for Biosensing Applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01301-2.pdf
Reference21 articles.
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3. Guangxi et al (2014) Analytical models for electric potential, threshold voltage, and subthreshold swing of junctionless surrounding-gate transistors. IEEE Trans Electr Devices 61(3):688–695
4. Venkatesh M, Suguna M, Balamurugan NB (2020) Influence of Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET for improved Analog/RF Performance. Silicon-Springer, http://link.springer.com/article/10.1007/s12633-020-00385-6
5. Venkatesh M, Balamurugan NB (2020) Influence of Threshold Voltage Performance analysis on Dual Halo Gate Stacked Triple Material Dual Gate TFET for Ultra Low Power Applications. Silicon-Springer, http://link.springer.com/article/10.1007/s12633-020-00422-4
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