Threshold voltage modeling based comparative performance exploration of Junctionless and Junction-Based High-K gate stack Dual-Material Cylindrical Gate-All-Around Macaroni MOSFET

Author:

Banerjee PrithaORCID,Das Jayoti

Publisher

Elsevier BV

Reference18 articles.

1. D’Agostino, F., Quercia, D.: Introduction to VLSI Design (EECS 467), Short-Channel Effects in MOSFETs, December 11th (2000).

2. “A suggested nanoscale partially depleted SOI-MOSFET (PDSOI) by built-in tunneling diodes- improvement on short channel effects and frequency features”;Anvarifard;Materials Science and Engineering: b, Elsevier,2023

3. A two dimensional analytical subthreshold behavior analysis including hot-carrier effect for nanoscale gate stack gate all around (GASGAA) MOSFETs;Abdi;J. Comput. Electron.,2011

4. Gate-induced drain leakage reduction in cylindrical dual-metal hetero-dielectric gate all around MOSFET;Rewari;IEEE Transactions on Electron Devices,2017

5. A neural approach to study the scaling capability of the undoped double-gate and cylindrical gate all around MOSFETs;Djeffal;Materials Science and Engineering: b, Elsevier,2008

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