Influence of Threshold Voltage Performance Analysis on Dual Halo Gate Stacked Triple Material Dual Gate TFET for Ultra Low Power Applications-Reference-Cited by-同舟云学术

Influence of Threshold Voltage Performance Analysis on Dual Halo Gate Stacked Triple Material Dual Gate TFET for Ultra Low Power Applications

Published:2020-02-21 Issue:1 Volume:13 Page:275-287
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Venkatesh M.^ORCID,Balamurugan N. B.

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s12633-020-00422-4.pdf

Reference33 articles.

1. Vadthiya Narendar. Performance Enhancement of FinFET Devices with Gate -Stack (GS) High - K Dielectrics for Nanoscale Applications S i l i c o n ,Springer Nature,21 June 2018 https://doi.org/10.1007/s12633-018-9774-7

2. Ionescu A, Riel H (2011) Tunnel field-effect transistors as energy efficient electronic switches. Nature 479(73):329–337

3. Buvaneswari B, Balamurugan NB (2018) ‘Sensitivity analysis of double gate metal oxide semiconductor field effect transistor for bio-sensing applications'. Journal of Nanoelectronics and Optoelectronics

4. David Cavalheiro,Francesc Moll, StanimirValtchev. TFET-Based Power Management Circuit for RF Energy Harvesting .IEEE Journal of the Electron Devices Society.Jan. 2017;5(1):7–17

5. M. Venkatesh & N. B Balamurugan 2019,“New subthreshold performance analysis of germanium based dual halo gate stacked triple material surrounding gate tunnel field effect transistor”, Superlattices and Microstructures-Elsevier (130), 485–498 https://doi.org/10.1016/j.spmi.2019.05.016

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