Improvement of AlN Film Quality by Controlling the Coalescence of Nucleation Islands in Plasma-Assisted Molecular Beam Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/27/5/058101/pdf
Reference11 articles.
1. GaN, AlN, and InN: A review
2. GaN-free transparent ultraviolet light-emitting diodes
3. An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer
4. High quality AlN grown on SiC by metal organic chemical vapor deposition
5. Reduction of threading dislocation densities in AlN∕sapphire epilayers driven by growth mode modification
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Strain-free ultrathin AlN epilayers grown directly on sapphire by high-temperature molecular beam epitaxy;Applied Physics Letters;2020-04-13
2. Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers;Journal of Crystal Growth;2018-02
3. MBE-grown AlN-on-Si with improved crystalline quality by using silicon-on-insulator substrates;Applied Physics Express;2014-05-29
4. Growth of Epitaxial AlN Thin Films on Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy;Korean Journal of Materials Research;2011-11-27
5. High Quality A1N with a Thin Interlayer Grown on a Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy;Chinese Physics Letters;2010-06
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