MBE-grown AlN-on-Si with improved crystalline quality by using silicon-on-insulator substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=6/a=065505/pdf
Reference19 articles.
1. GaN, AlN, and InN: A review
2. AlN avalanche photodetectors
3. Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures
4. High-color-rendering light sources consisting of a 350-nm ultraviolet light-emitting diode and three-basal-color phosphors
5. A study of semi-insulating GaN grown on AlN buffer/sapphire substrate by metalorganic chemical vapor deposition
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Molecular Beam Epitaxy of AlGaN Epilayers on Si for Vertical Deep Ultraviolet Light-Emitting Diodes;ECS Journal of Solid State Science and Technology;2022-11-01
2. Molecular Beam Epitaxial Growth of AlN Thin Films on Si through Exploiting Low Al Adatom Migration and the Nitrogen-Rich Environment on a Nanowire Template;Crystal Growth & Design;2021-05-26
3. High quality thin AlN epilayers grown on Si(110) substrates by metal-organic chemical vapor deposition;CrystEngComm;2017
4. Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate;Scientific Reports;2015-10-06
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