Molecular Beam Epitaxial Growth of AlN Thin Films on Si through Exploiting Low Al Adatom Migration and the Nitrogen-Rich Environment on a Nanowire Template-Reference-Cited by-同舟云学术

Molecular Beam Epitaxial Growth of AlN Thin Films on Si through Exploiting Low Al Adatom Migration and the Nitrogen-Rich Environment on a Nanowire Template

Published:2021-05-26 Issue:7 Volume:21 Page:3645-3649
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Yin Xue¹,Zhang Qihua¹,Zhao Songrui¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada

Funder

Fonds de Recherche du Qu??bec - Nature et Technologies

Natural Sciences and Engineering Research Council of Canada

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.1c00327

Reference50 articles.

1. GaN, AlN, and InN: A review

2. Synthesis of c-axis oriented AlN thin films on different substrates: A review

3. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

4. Band structure and fundamental optical transitions in wurtzite AlN

5. Room-Temperature Stimulated Emission from AlN at 214 nm

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