Reduction of threading dislocation densities in AlN∕sapphire epilayers driven by growth mode modification
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2170407
Reference11 articles.
1. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
2. Novel approach to simulation of group-III nitrides growth by MOVPE
3. Bending of dislocations in GaN during epitaxial lateral overgrowth
4. Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
5. Reduction of threading dislocation density in GaN using an intermediate temperature interlayer
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