Growth of Epitaxial AlN Thin Films on Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Growth of Epitaxial AlN Thin Films on Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy

Published:2011-11-27 Issue:11 Volume:21 Page:634-638
ISSN:1225-0562
Container-title:Korean Journal of Materials Research
language:en
Short-container-title:Korean Journal of Materials Research

Author:

Lee Hyo-Sung,Han Seok-Kyu,Lim Dong-Seok,Shin Eun-Jung,Lim Se-Hwan,Hong Soon-Ku,Jeong Myoung-Ho,Lee Jeong-Yong,Yao Takafumi

Publisher

The Materials Research Society of Korea

Subject

General Materials Science

Link

http://ocean.kisti.re.kr/downfile/crosscheck/mrsk/JAKO201101152704174.pdf

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth Characteristics of AlN by Plasma-Assisted Molecular Beam Epitaxy with Different Al Flux;Korean Journal of Materials Research;2012-10-27

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