The role of surface cleaning in the ellipsometric studies of ion-implanted silicon
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337578108210055
Reference11 articles.
1. Determination of the complex refractive index profiles in P+31 ion implanted silicon by ellipsometry
2. Complex refractive index and phosphorus concentration profiles in P+31 ion implanted silicon by ellipsometry and auger electron spectroscopy
3. Ellipsometric study of tellurium implanted silicon
4. Characterization of31P+‐implanted Si layers by ellipsometry
5. Investigation of ion‐implanted GaP layers by ellipsometry
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1. Complex dielectric function of ion implantation amorphized SiC determined by spectroscopic ellipsometry;physica status solidi (c);2008-05
2. Ellipsometric models for vertically inhomogeneous composite structures;physica status solidi (a);2008-04
3. Thermal stability of NiSi2on high‐dose ion‐implanted (001) Si;Journal of Applied Physics;1992-01-15
4. Interfacial reactions of nickel thin films on BF+2‐implanted (001)Si;Journal of Applied Physics;1991-09
5. Removal of end‐of‐range defects in BF+2implanted (111)Si by the grain growth of thin NiS2overlayer;Journal of Applied Physics;1991-05-15
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