Interfacial reactions of nickel thin films on BF+2‐implanted (001)Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349375
Reference19 articles.
1. Dopant Redistribution During Silicide Formation
2. Epitaxial growth of NiSi2on ion‐implanted silicon at 250–280 °C
3. Dopant redistribution in silicide–silicon and silicide–polycrystalline silicon bilayered structures
4. Interfacial reactions of cobalt thin films on BF+2ion‐implanted (001) silicon
5. Interfacial reactions of titanium thin films on BF+2‐implanted (001)Si
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