Interfacial reactions of titanium thin films on BF+2‐implanted (001)Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344067
Reference33 articles.
1. High Temperature Process Limitation on TiSi2
2. Redistribution of As during Pd2Si formation: Electrical measurements
3. Epitaxial growth of NiSi2on ion‐implanted silicon at 250–280 °C
4. Dopant redistribution in silicide–silicon and silicide–polycrystalline silicon bilayered structures
5. Interfacial reactions of cobalt thin films on BF+2ion‐implanted (001) silicon
Cited by 34 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Enhanced thermal and morphological stability of Ni(Si1−xGex) growth on BF2+-preamorphized Si0.8Ge0.2 substrate;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-08
2. Metal Silicides in CMOS Technology: Past, Present, and Future Trends;Critical Reviews in Solid State and Materials Sciences;2003-11
3. X-ray photoemission spectroscopy study of silicidation of Ti on BF[sub 2][sup +]-implanted polysilicon;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
4. Formation of voids in Ti-salicided BF2+-doped submicron polysilicon lines;Journal of Applied Physics;2000-06-15
5. Void formation in titanium desilicide/p+ silicon interface: impact on junction leakage and silicide sheet resistance;Materials Science and Engineering: B;2000-05
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3