Ellipsometric study of tellurium implanted silicon
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337577608237430
Reference9 articles.
1. Formation of Amorphous Silicon by Ion Bombardment as a Function of Ion, Temperature, and Dose
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3. Ellipsometric study of 400ev ion damage in silicon
4. Bogh, E., Hogild, P. and Stensgaard, I. 1971.Ion Implantation, Edited by: Eisen, F. H. and Chadderton, L. T. 431Gordon and Breach.
5. A model for the formation of amorphous Si by ion bombardment
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1. Dielectric functions E1 and E1 + Δ in near region of critical points and chemical composition of near surface layers of ions implanted GaAs;Surface and Coatings Technology;2018-12
2. ELLIPSOMETRIC CHARACTERIZATION OF THIN FILMS;Handbook of Surfaces and Interfaces of Materials;2001
3. Chapter 1 Ellipsometric Analysis;Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization;1997
4. Nondestructive determination of damage depth profiles in ion‐implanted semiconductors by multiple‐angle‐of‐incidence single‐wavelength ellipsometry using different optical models;Journal of Applied Physics;1992-09-15
5. Nondestructive determination of damage depth profiles in ion‐implanted semiconductors by spectroscopic ellipsometry using different optical models;Journal of Applied Physics;1992-03-15
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