Removal of end‐of‐range defects in BF+2implanted (111)Si by the grain growth of thin NiS2overlayer-Reference-Cited by-同舟云学术

Removal of end‐of‐range defects in BF+2implanted (111)Si by the grain growth of thin NiS2overlayer

Published:1991-05-15 Issue:10 Volume:69 Page:7322-7324
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chen W. J.,Chen L. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.347583

Reference11 articles.

1. Defect annihilation in shallowp+junctions using titanium silicide

2. Kinetics of formation of silicides: A review

3. Interfacial reactions of cobalt thin films on BF+2ion‐implanted (001) silicon

4. Effects of silicide formation on the removal of end-of-range ion implantation damage in silicon

5. Removal of End-of-Range Ion Implantation Defects in Silicon by Near Noble and Refractory Silicide Formation

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1. The role of Ti interlayer in carbon nanotube growth;Surface and Coatings Technology;2008-02

2. Enhanced thermal and morphological stability of Ni(Si1−xGex) growth on BF2+-preamorphized Si0.8Ge0.2 substrate;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-08

3. F-enhanced morphological and thermal stability of NiSi films on BF2+-implanted Si(001);Applied Physics Letters;2002-12-30

4. Metal contacts on shallow junctions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-01

5. Thermal stability of NiSi2on high‐dose ion‐implanted (001) Si;Journal of Applied Physics;1992-01-15