Defect annihilation in shallowp+junctions using titanium silicide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98726
Reference7 articles.
1. Dual ion implantation technique for formation of shallowp+/njunctions in silicon
2. Rapid Thermal Annealing of Pre-Amorphized B and BF2-Implanted Silicon
3. Germanium Implantation into Silicon: An Alternate Pre‐Amorphization/Rapid Thermal Annealing Procedure for Shallow Junction Formation
4. Shallow junction formation by preamorphization with tin implantation
5. Elimination of end‐of‐range and mask edge lateral damage in Ge+preamorphized, B+implanted Si
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