Impact of Ge pre-amorphization implantation on Co/Co-Ti/n+-Si contacts in advanced Co interconnects-Reference-Cited by-同舟云学术

Impact of Ge pre-amorphization implantation on Co/Co-Ti/n+-Si contacts in advanced Co interconnects

Published:2020-05-21 Issue:SL Volume:59 Page:SLLB01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Zhang Dan,Xu Jing,Gao Jianfeng,Du Anyan,Zhang Jing,Mao Shujuan,Men Yang,Liu Pengfei,Gu Shihai,Luo Xue,Liu Yaodong,Wang Guilei,Li Junfeng,Zhao Chao,Wang Wenwu,Chen Dapeng,Ye Tianchun,Luo Jun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.35848/1347-4065/ab922f/pdf

Reference32 articles.

1. Thickness dependence of the resistivity of platinum-group metal thin films

2. Review of the Global Trend of Interconnect Reliability for Integrated Circuit

3. Comprehensive study of the resistivity of copper wires with lateral dimensions of 100 nm and smaller

4. Impact of Wire Geometry on Interconnect RC and Circuit Delay

5. Advanced Interconnects: Materials, Processing, and Reliability

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