Removal of End-of-Range Ion Implantation Defects in Silicon by Near Noble and Refractory Silicide Formation-Reference-Cited by-同舟云学术

Removal of End-of-Range Ion Implantation Defects in Silicon by Near Noble and Refractory Silicide Formation

Published:1989 Issue: Volume:147 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Lur W.,Cheng J. Y.,Chen L. J.

Abstract

AbstractComplete removal of end-of-range (EOR) defects in ion implanted silicon has been achieved by the formation and growth of near noble silicides (CoSi 2 and NiSi 2 ) and refractory silicides (MoSi 2 and WSi2). Continued generation of vacancies during the silicide growth was found to be essential to reduce EOR defects. The results are consistent with the suggestion of the presence of a vacancy diffusion barrier near the EOR defects

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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1. Vacancies and their clusters in MoSi2 studied by positron lifetime spectrometry;Intermetallics;1998-01

2. Source/Drain Dislocations and Electrical Leakage in Titanium‐Salicided CMOS Integrated Circuits;Journal of The Electrochemical Society;1994-07-01

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4. Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions;Journal of Applied Physics;1992-06

5. Removal of end‐of‐range defects in BF+2implanted (111)Si by the grain growth of thin NiS2overlayer;Journal of Applied Physics;1991-05-15