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Silicides

Published:1993 Issue: Volume: Page:227-309
ISSN:
Container-title:Rapid Thermal Processing
language:
Short-container-title:

Author:

Osburn C.M.

Publisher

Elsevier

Reference336 articles.

1. Silicides for VLSI Applications;Murarka,1983

2. Formation and Characterization of Transition-Metal Silicides;Nicolet,1983

3. Silicidation by Rapid Thermal Processing;Van den hove,1989

4. Silicon Processing for the VLSI Era: Volume 1—Process Technology;Wolf,1986

5. Silicides and Rapid Thermal Annealing;d'Heurle;Mat. Res. Soc. Symp. Proc,1986

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Texture in thin film silicides and germanides: A review;Applied Physics Reviews;2016-09

2. Ohmic contact using the Si nano-interlayer for undoped-AlGaN/GaN heterostructures;Journal of Electronic Materials;2006-03

3. Atomic force microscope investigation of the thermal stability of thin TiSi2 films;Journal of Materials Research;1998-07

4. A parametric study of titanium silicide formation by rapid thermal processing;Journal of Materials Research;1996-02

5. Epitaxial Growth of NiSi2 on (111)Si Inside 0.1-0.6 μM in Size Oxide Openings Prepared by Electron Beam Lithography;MRS Proceedings;1996

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