Complex refractive index and phosphorus concentration profiles in P+31 ion implanted silicon by ellipsometry and auger electron spectroscopy-Reference-Cited by-同舟云学术

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Complex refractive index and phosphorus concentration profiles in P+31 ion implanted silicon by ellipsometry and auger electron spectroscopy

Published:1976-06 Issue: Volume:56 Page:307-315
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Adams James R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference18 articles.

1. Ion Implantation in Semiconductors;Mayer,1970

2. Ion Beams, With Application to Ion Implantation;Wilson,1973

3. Ion Implantation;Eisen,1971

4. Ellipsometric study of 400ev ion damage in silicon

5. Ellipsometric Analysis of Radiation Damage in Dielectrics

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dielectric functions E1 and E1 + Δ in near region of critical points and chemical composition of near surface layers of ions implanted GaAs;Surface and Coatings Technology;2018-12

2. Inverse profiling by ellipsometry: a Newton-Kantorovitch algorithm;Optics Communications;1994-01

3. Annealing kinetics of defects of ion-implanted and furnace-annealed silicon layers: thermodynamic approach;Semiconductor Science and Technology;1992-11-01

4. Characterization of radiation damage by ellipsometry and channeling;Vacuum;1989-01

5. Sputter Depth Profiling of Microelectronic Structures;Journal of The Electrochemical Society;1983-05-01

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