Investigation of ion‐implanted GaP layers by ellipsometry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323579
Reference15 articles.
1. Zinc ion implantation of sulfur‐doped GaP
2. Proton‐implanted GaP optical waveguide
3. Optical rectification due to free carriers in gallium phosphide
4. Infrared absorption of silicon isotopes in gallium phosphide
5. Electric Fields Produced by the Propagation of Plane Coherent Electromagnetic Radiation in a Stratified Medium
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1. Effects of 200 MeV silver ion irradiation on the optical properties of gallium phosphide;Radiation Effects and Defects in Solids;2013-08
2. Electrical and optical effects of He+ ion irradiation in InGaP/GaAs/InGaAs lasers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-04
3. Electrical isolation and transparency in ion-irradiated p-InGaP/GaAs/InGaAs structures;Journal of Applied Physics;2000-12-15
4. Annealing kinetics of defects of ion-implanted and furnace-annealed silicon layers: thermodynamic approach;Semiconductor Science and Technology;1992-11-01
5. Characterization of radiation damage by ellipsometry and channeling;Vacuum;1989-01
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