Infrared absorption of silicon isotopes in gallium phosphide-Reference-Cited by-同舟云学术

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Infrared absorption of silicon isotopes in gallium phosphide

Published:1974-12 Issue:12 Volume:45 Page:5475-5477
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kachare A. H.,Spitzer W. G.,Lorimor O. G.,Euler F. K.,Brown R. N.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1663266

Reference8 articles.

1. Silicon donor-acceptor pairs and silicon-carbon complexes in gallium phosphide

2. Localized vibrational modes of light impurities in gallium phosphide. (Absorption spectra)

3. Infrared absorption of mixed silicon isotope pairs in gallium arsenide

4. A Technique for Determining p‐n Junction Doping Profiles and Its Application to GaP

5. Free-Carrier Absorption inn-Type GaP

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vibrational Absorption of Substitutional Atoms and Related Centres;Springer Series in Solid-State Sciences;2011-10-27

2. Gallium atom defects in electron irradiated gallium phosphide;Journal of Physics C: Solid State Physics;1982-06-10

3. Green's-function theory of impurity vibrations due to defect complexes in elemental and compound semiconductors;Physical Review B;1980-04-15

4. Electrical profiles of magnesium‐ion‐implanted GaP;Journal of Applied Physics;1979-03

5. Vibrational modes of silicon in indium phosphide;Journal of Physics C: Solid State Physics;1978-05-14

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