Author:
Lank David J.,Dobbs B. C.,Park Y. S.
Subject
General Physics and Astronomy
Cited by
10 articles.
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1. Void formation and inhibition of layer intermixing in ion‐impIanted GaAs/AlGaAs superlattices;Applied Physics Letters;1989-09-18
2. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
3. Characterization of ion‐implantation doping of strained‐layer superlattices. II. Optical and electrical properties;Journal of Applied Physics;1986-11-15
4. Ion-implantation doping of strained-layer superlattices;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1985-05
5. Ion implantation into strained-layer superlattices;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1985-03