Band Gap of Gallium Phosphide from 0 to 900°K and Light Emission from Diodes at High Temperatures
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRev.171.876/fulltext
Reference23 articles.
1. Electroluminescent recombination near the energy gap in GaP diodes
2. Intrinsic Absorption-Edge Spectrum of Gallium Phosphide
3. Bound Excitons in GaP
4. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
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