Effects of 200 MeV silver ion irradiation on the optical properties of gallium phosphide-Reference-Cited by-同舟云学术

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Effects of 200 MeV silver ion irradiation on the optical properties of gallium phosphide

Published:2013-08 Issue:7-8 Volume:168 Page:564-570
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Jadhav Vidya,Kirkire M. D.,Dubey S. K.,Yadav A. D.,Singh A.,Singh F.,Kanjilal D.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420150.2013.789028

Reference10 articles.

1. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

2. Zinc ion implantation of sulfur‐doped GaP

3. Infrared reflection and Raman scattering of ion‐implanted nitrogen in gallium phosphide

4. Investigation of ion‐implanted GaP layers by ellipsometry

5. Photoluminescence of neodymium‐implanted gallium phosphide and gallium arsenide

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface and transport properties of gamma irradiated Au/n-GaP Schottky diode;Materials Science in Semiconductor Processing;2018-02

2. The role of electronic energy loss in SHI irradiated Ni/oxide/n-GaP Schottky diode;Microelectronics Reliability;2017-02

3. Effect of Au8+ irradiation on Ni/n-GaP Schottky diode: Its influence on interface state density and relaxation time;Physica B: Condensed Matter;2017-01

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