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Effect of Au8+ irradiation on Ni/n-GaP Schottky diode: Its influence on interface state density and relaxation time

  • Published:2017-01 Issue: Volume:504 Page:133-138
  • ISSN:0921-4526
  • Container-title:Physica B: Condensed Matter
  • language:en
  • Short-container-title:Physica B: Condensed Matter

Author:

Shiwakoti N.,Bobby A.,Asokan K.,Antony Bobby

Funder

ISM

Department of Science and Technology

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Frequency and temperature-dependent electrical characteristics of Ni/n-GaP/Al Schottky barrier diodes;Journal of Materials Science: Materials in Electronics;2023-09

2. Analysis of admittance measurements of Al/Gr-PVA/p-Si (MPS) structure;Journal of Physics and Chemistry of Solids;2022-10

3. Photodiode based on Pb0.9Cd0.1S ternary alloy semiconductor for solar tracking systems;Journal of Materials Science: Materials in Electronics;2018-08-04

4. Analysis of interface states in Au/ZnO/p-InP (MOS) structure;Journal of Materials Science: Materials in Electronics;2018-05-29

5. A photodiode based on PbS nanocrystallites for FYTRONIX solar panel automatic tracking controller;Physica B: Condensed Matter;2017-12
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