Frequency and temperature-dependent electrical characteristics of Ni/n-GaP/Al Schottky barrier diodes
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s10854-023-11251-7.pdf
Reference45 articles.
1. N. Shiwakoti, A. Bobby, K. Asokan, B. Antony, Temperature dependent dielectric studies of ni / n-GaP Schottky diodes by capacitance and conductance measurements. Mater. Sci. Semiconduct. Process. 42, 378–382 (2016). https://doi.org/10.1016/j.mssp.2015.11.010
2. K. Ejderha, A. Turut, Dependence of Electrical Properties of Ni/n–GaP/Al Schottky Contacts on Measurement temperature and thermal annealing. J. Electron. Mater. 50, 6741–6747 (2021). https://doi.org/10.1007/s11664-021-08983-9
3. N. Shiwakoti, A. Bobby, K. Asokan, B. Antony, The role of electronic energy loss in SHI irradiated Ni/oxide/n-GaP Schottky diode. Microelectron. Reliab. 69, 40–46 (2017). https://doi.org/10.1016/j.microrel.2016.12.005
4. A. Ismail, M. Boumedienne, L. Lassabatere, Schottky Diode Properties of au, In-GaP (111) and (110) chemically etched surfaces. Solid State Electron. 38, 497–501 (1995). https://doi.org/10.1016/0038-1101(94)E0061-I
5. P. Horley, Y.V. Vorobiev, V.P. Makhniy, V.M. Sklyarchuk, Optoelectronic properties of ni – GaP diodes with a modified surface. Phys. E. 83, 227–231 (2016). https://doi.org/10.1016/j.physe.2016.05.012
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