Interface and transport properties of gamma irradiated Au/n-GaP Schottky diode-Reference-Cited by-同舟云学术

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Interface and transport properties of gamma irradiated Au/n-GaP Schottky diode

Published:2018-02 Issue: Volume:74 Page:1-6
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Shiwakoti N.,Bobby A.,Asokan K.,Antony Bobby

Funder

ISM, Dhanbad

Department of Science and Technology

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference50 articles.

1. Gallium phosphide junctions with low leakage for energy conversion and near ultraviolet detectors

2. Thermal-resistant TiB x -n-GaP Schottky diodes

3. Properties of GaP Schottky barrier diodes at elevated temperatures

4. High-temperature gallium phosphide dynistors

5. Ag-GaP schottky photodiodes for UV sensors

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1. Characterization of interface states and investigation of possible current conduction mechanisms in the Pt, Au, Cu/n-InP Schottky diodes;Physica Scripta;2024-08-21

2. Frequency and temperature-dependent electrical characteristics of Ni/n-GaP/Al Schottky barrier diodes;Journal of Materials Science: Materials in Electronics;2023-09

3. Thermal sensing capability and current–voltage–temperature characteristics in Pt/n-GaP/Al/Ti Schottky diodes;Journal of Vacuum Science & Technology B;2023-03

4. The Graphene Structure’s Effects on the Current-Voltage and Photovoltaic Characteristics of Directly Synthesized Graphene/n-Si(100) Diodes;Nanomaterials;2022-05-11

5. Dependence of Electrical Properties of Ni/n-GaP/Al Schottky Contacts on Measurement Temperature and Thermal Annealing;Journal of Electronic Materials;2021-10-01

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