Thermal sensing capability and current–voltage–temperature characteristics in Pt/n-GaP/Al/Ti Schottky diodes

Author:

Efeoǧlu Hasan12ORCID,Turut Abdulmecit3ORCID

Affiliation:

1. Department of Nanoscience and Nanoengineering, Atatürk University, Erzurum 25240, Turkey

2. Department of Electrical & Electronics Engineering, Atatürk University, Erzurum 25240, Turkey

3. Tütüncü Mehmet Efendi Street, Goztepe Kadıkoy, Istanbul, Turkey

Abstract

We have discussed the thermal sensing capability under a constant current level and current versus voltage ( I–V) traces by measuring the temperature of high series resistance Pt/ n-GaP/Al/Ti Schottky structures in the 100−320 K range. The Rs values of 35 Ω and 4.50 × 103 kΩ for the device have been determined from I–V traces at 320 and 100 K, respectively. The thermal sensing ( V–T) curves are expected to give a straight line at each current level. However, the V–T curves have deviated upward from linearity due to the high Rs value of the device after a certain temperature. The deviation point from linearity in V–T traces shifts to higher temperatures with an increase in bias voltage and current level. Thereby, the straight-line interval portion of the V–T curve has become too small with an increase in the current value. The thermal sensing coefficient α changed from 2.49 mV/K at 10  μA to 3.21 mV/K at 0.50 nA. Therefore, it has been concluded that the Pt/ n-GaP/Al/Ti Schottky barrier (SB) is preferable for thermal sensor applications at the small current levels of 0.50, 1.0, 2.0, and 10.0 nA with high sensitivity up to a minimum temperature of 100 K. From I–V curves, [Formula: see text] and ideality factor values have ranged from 1.200 eV and 1.066 at 320 K to 0.854 eV and 1.705 at 100 K. It has been reported in the literature that the large SB height leads to a better temperature response.

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

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