Ag-GaP schottky photodiodes for UV sensors-Reference-Cited by-同舟云学术

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Ag-GaP schottky photodiodes for UV sensors

Published:2003-01 Issue:1 Volume:50 Page:215-217
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Pikhtin A.N.,Tarasov S.A.,Kloth B.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/26588/01185184.pdf?arnumber=1185184

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultraviolet Sensors;Wide Bandgap Nanowires;2022-06-23

2. Interface and transport properties of gamma irradiated Au/n-GaP Schottky diode;Materials Science in Semiconductor Processing;2018-02

3. Selective UV photodetectors based on the metal–AlGaN Schottky barrier;Journal of Communications Technology and Electronics;2017-09

4. Surface-Barrier Photodiodes with Transparent Electrodes for High-Performance Detection in the UV-NIR Spectrum;Optoelectronics - Advanced Device Structures;2017-07-12

5. Transport properties of Gallium Phosphide based Schottky contact with thin insulating layer;Materials Science in Semiconductor Processing;2017-04

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