Transport properties of Gallium Phosphide based Schottky contact with thin insulating layer
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference29 articles.
1. Gallium phosphide junctions with low leakage for energy conversion and near ultraviolet detectors
2. Properties of GaP Schottky barrier diodes at elevated temperatures
3. The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes
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5. High-temperature stability of Au Pt/n-GaAs Schottky barrier diodes
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1. Dependence of Electrical Properties of Ni/n-GaP/Al Schottky Contacts on Measurement Temperature and Thermal Annealing;Journal of Electronic Materials;2021-10-01
2. Effect of illumination on the electrical characteristics of Au/n-GaP/Al and Au/Chlorophyll-a/n-GaP/Al structures;Materials Science and Engineering: B;2021-03
3. Determination of the Optimal Sensing Temperature in Pt/Ta2O5/MoO3 Schottky Contacted Nanobelt Straddling Heterojunction;Sensors;2018-11-05
4. Interface and transport properties of gamma irradiated Au/n-GaP Schottky diode;Materials Science in Semiconductor Processing;2018-02
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