Author:
Ajayan J.,Ravichandran T.,Prajoon P.,Pravin J. Charles,Nirmal D.
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference35 articles.
1. Ajayan, J., Nirmal, D.: A review of InP/InAlAs $$\backslash $$ \ InGaAs based transistors for high frequency applications. Superlattices Microstruct. 86(10), 1–19 (2015)
2. Del Alamo, J.A.: Nanometre electronics with III-V compound semiconductors. Nature 479(7373), 317–323 (2011)
3. Sun, S.X., Ma, L.H., Cheng, C., Zhang, C., Zhong, Y.H., Li, Y.X., Ding, P., Jin, Z.: Numerical simulation of the impact of surface traps on the performance of InP-based high electron mobility transistors. Phys. Status Solidi A 1700322 (2017). doi: 10.1002/pssa.201700322 (2017).
4. Ajayan, J., Nirmal, D.: 20 nm high performance enhancement mode InP HEMT with heavily doped S/D regions for future THz applications. Superlattices Microstruct. 100(15), 526–534 (2016)
5. Del Alamo, J.A., Antoniadis, D.A., Lin, J., Lu, W., Vard, A., Zhao, X.: Nanometer-scale III-V MOSFETs. J. Electron Devices Soc. 4(5), 2015–214 (2016)
Cited by
22 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献