Numerical simulation of the impact of surface traps on the performance of InP-based high electron mobility transistors-Reference-Cited by-同舟云学术

Numerical simulation of the impact of surface traps on the performance of InP-based high electron mobility transistors

Published:2017-06-20 Issue:10 Volume:214 Page:1700322
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Sun Shu-Xiang¹,Ma Liu-Hong¹,Cheng Chao¹,Zhang Chao¹,Zhong Ying-Hui¹,Li Yu-Xiao¹,Ding Peng²,Jin Zhi²

Affiliation:

1. School of Physics and Engineering; Zhengzhou University; Zhengzhou 450001 P. R. China

2. Institute of Microelectronics; Chinese Academy of Sciences; Beijing 100029 P. R. China

Funder

National Natural Science Foundation of China

Zhengzhou University

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. A Low-Power 670-GHz InP HEMT Receiver

2. K. Leong X. B. Mei A. Zamora S. Shih W. R. Deal

3. M. J. W. Rodwell 2014

4. THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors

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