Influence of BCB Protection on Irradiation Response of InP-Based HEMTs: A Comparative Study
Author:
Affiliation:
1. School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, China
2. China Academy of Space Technology (CAST), Beijing, China
3. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
Funder
National Natural Science Foundation of China
Natural Science Foundation of Henan Province
Promotion Funding for Excellent Young Backbone Teacher of Henan Province in China
Program for Innovative Cooperation Team of Yong Talent and Enterprise in Zhengzhou University of China
Program for Professor Team to Help the Innovation-Driven Development of Enterprise in Zhengzhou University of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10194493/10168052.pdf?arnumber=10168052
Reference33 articles.
1. Impact of Surface Passivation on the Dynamic ON-Resistance of Proton-Irradiated AlGaN/GaN HEMTs
2. Effect of Surface Passivation and Substrate on Proton Irradiated AlGaN/GaN HEMT Transport Properties
3. Millimeter-Wave GaN HEMTs With Cavity-Gate Structure Using MSQ-Based Inter-Layer Dielectric
4. Influence of Poly-AlN Passivation on the Performance Improvement of 3-MeV Proton-Irradiated AlGaN/GaN MIS-HEMTs
5. SRIM – The stopping and range of ions in matter (2010)
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Radiation Effects Modeling of InP-based HEMT Based on Neural Networks;Microelectronics Journal;2024-09
2. A behavioral model for electron irradiation effect on the DC performance in InP-based HEMT;Microelectronics Journal;2024-06
3. Intrinsic point defects investigation in InAlAs with extrapolated defect transition level;Microelectronics Journal;2024-05
4. WITHDRAWN: Vacancies and antisites investigation at InAlAs/InGaAs hetero-interface: A first-principles study;Results in Physics;2024-05
5. Small-signal behavioral-level modeling of InP HBT based on SO-BP neural network;Solid-State Electronics;2023-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3