Influence of double InGaAs/InAs channel on DC and RF performances of InP-based HEMTs
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Published:2022-06
Issue:3
Volume:18
Page:411-419
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ISSN:1584-9953
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Container-title:Journal of Ovonic Research
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language:
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Short-container-title:JOR
Author:
Hao H. L., ,Su M. Y.,Wu H. T.,Mei H. Y.,Yao R. X.,Liu F.,Wen H.,Sun S. X., , , , , , ,
Abstract
The double InGaAs/InAs channel structure is designed to improve DC and RF characteristics of InP-based HEMT, which is studied by the numerical simulation. The saturated channel current, transconductance, subthreshold slope, drain induced barrier lowering, and frequency characteristics are analyzed. A comparison is done between the device with the double InGaAs/InAs channel and InGaAs channel. By using double InGaAs/InAs channel, maximum transconductance of 1019.7 mS/mm is achieved, and the lower value of subthreshold slope and drain induced barrier lowering is also obtained. The excellent performance of device with double InGaAs/InAs channel structure is mainly due to the enhanced confinement of the electrons in the channel region. In addition, the maximum oscillation frequency of 758.7 GHz is obtained with the double InGaAs/InAs channel structure.These results indicate that InP-based HEMT with double InGaAs/InAs channel structure is a promising candidate for high frequency application.
Publisher
Virtual Company of Physics
Subject
Surfaces, Coatings and Films,Physics and Astronomy (miscellaneous),Electronic, Optical and Magnetic Materials
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