Impact of Cap Length in InAlAs/InGaAs Based High Electron Mobility Transistor
Author:
Affiliation:
1. Jadavpur University,Department of Electronics and Tele-Communication Engineering,Kolkata,India,700032
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10465675/10465678/10465843.pdf?arnumber=10465843
Reference10 articles.
1. Investigation of breakdown performance in $$L_{g}$$ L g = 20 nm novel asymmetric InP HEMTs for future high-speed high-power applications
2. First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process
3. InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
4. Demonstration of a 0.48 THz Amplifier Module Using InP HEMT Transistors
5. Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz
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