Characterization of single event effect simulation in InP-based High Electron Mobility Transistors
Author:
Funder
China Postdoctoral Science Foundation
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference23 articles.
1. A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications;Ajayan;Mater Sci Semicond Process,2021
2. A novel process for adjusting the gate-drain spacing in InP-HEMTs with;Zhu;Microelectron Eng,2021
3. Electrical characterization of InGaAs/InAlAs/InP HEMT with multi-finger gate;He;Microelectron J,2021
4. Investigation of Impact of Passivation Materials on the DC/RF Performances of InP-HEMTs for Terahertz Sensing and Imaging;Ajayan;Silicon,2020
5. Research of single-event burnout and hardened GaN MISFET with embedded PN junction;Fei;Microelectron Reliab,2020
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigating single-event effects in recess gate GaN/AlN p-channel HEMTs for radiation-hardened application;Journal of Computational Electronics;2024-08-19
2. Simulation and analysis of the single event transient characteristics of SiGe HBT at low-temperature environment;Journal of Instrumentation;2024-08-01
3. Assessing single event upset susceptibility of InAlN HEMT with cap layer under heavy-ion environment;Microsystem Technologies;2024-07-25
4. Simulation and analysis of inverse-mode operation of single event transient mechanisms on NPN-SiGe HBT;Physica Scripta;2024-04-23
5. Impact of Cap Length in InAlAs/InGaAs Based High Electron Mobility Transistor;2023 8th International Conference on Computers and Devices for Communication (CODEC);2023-12-14
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3