Electrical characterization of InGaAs/InAlAs/InP HEMT with multi-finger gate
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference26 articles.
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2. Optimization of InP HEMT using multilayered cap and asymmetric gate recess;Ankit,2018
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1. The interfacial features in photoluminescence of In0.52Al0.48As/InP distinguished with selective excitation;AIP Advances;2024-01-01
2. Design of 30 nm multi-finger gate GaN HEMT for high frequency device;International Journal of Electronics;2023-02-02
3. Influence of double InGaAs/InAs channel on DC and RF performances of InP-based HEMTs;Journal of Ovonic Research;2022-06
4. Characterization of single event effect simulation in InP-based High Electron Mobility Transistors;Results in Physics;2022-05
5. Investigation of proton irradiated dual field plate AlGaN/GaN HEMTs: TCAD based assessment;Microelectronics Journal;2022-04
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