1. Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative Ƴ-ray irradiation;Sharma;Microelectron. Reliab.,2019
2. GaN technology for power electronic applications: a review;Flack;J. Electron. Mater.,2016
3. Gallium nitride devices for power electronic applications;Baliga;Semicond. Sci. Technol.,2013
4. Review of commercial GaN power devices and GaN-based converter design challenges;Jones;IEEE J. Emerg. Select. Top. Power Electron.,2016
5. Lijun He, Boyang Zhao, Chengyun He, Zhiyang Xie, Jinsha Zhang, Weizhong Chen, Electrical characterization of InGaAs/InAlAs/InP HEMT with multi-finger gate, Microelectron. J., Available online (November 2021), 105261.