Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference39 articles.
1. 30-nm InAs PHEMTs with fT=644 GHz and fmax=681 GHz;Kim;IEEE Electron Device Lett.,2010
2. 30-nm InAs pseudomorphic HEMTs on an InP substrate with a current-gain cut off frequency of 628 GHz;Kim;IEEE Electron Device Lett.,2008
3. A review of InP/InAlAs∖InGaAs based transistors for high frequency applications;Ajayan;Superlattices Microstruct. Elsevier,2015
4. Sub 50 nm InP HEMT device with fmax greater than 1 THz;Lai,2007
5. THz monolithic integrated circuits using InP high electron mobility transistors;Deal;IEEE Tans. Terahertz Sci. Technol.,2011
Cited by
34 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献