An Intensive Study on Assorted Substrates Suitable for High JFOM AlGaN/GaN HEMT
Author:
Funder
DRDO, India
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00549-4.pdf
Reference48 articles.
1. Augustine Fletcher AS, Nirmal D (2017) A survey of Gallium Nitride HEMT for RF and high power application. Superlattice Microst 109:519–537
2. Augustine Fletcher AS, Nirmal D, Arivazhagan L, Varghese JAA (2019) Enhancement of Johnson figure of merit in III-V HEMT combined with discrete field plate and AlGaN blocking layer. International Journal RF and Microwave Computer-Aided Engineering 30(2):1–9
3. Vitanov S, Palankovski V, Maroldt S, Quay R (2010) High-temperature modeling of AlGaN/GaN HEMTs. Solid State Electron 54:1105–1112
4. Tomio S, Ken O, Atsushi N (2018) GaN HEMT for space applications. IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium 2:136–139
5. Kuwabara T, Tawa N, Tone Y, Kaneko T (2017) A 28 GHz 480 elements digital AAS using GaN HEMT amplifiers with 68 dB EIRP for 5G long range base station applications. IEEE Compound Semiconductor Integrated Circuits Symposium 3:1–4
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