A 28 GHz 480 elements digital AAS using GaN HEMT amplifiers with 68 dBm EIRP for 5G long-range base station applications-Reference-Cited by-同舟云学术

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A 28 GHz 480 elements digital AAS using GaN HEMT amplifiers with 68 dBm EIRP for 5G long-range base station applications

Published:2017-10 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
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Author:

Kuwabara Toshihide,Tawa Noriaki,Tone Yuichi,Kaneko Tomoya

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8211425/8240418/08240471.pdf?arnumber=8240471

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. A 39 GHz spatial division multiplex MU-MIMO using 256 element hybrid AAS for IAB application;International Journal of Microwave and Wireless Technologies;2023-05-05

3. A 28 GHz 8 × 8 Gapwaveguide Phased Array Employing GaN Front-End With 60 dBm EIRP;IEEE Transactions on Antennas and Propagation;2023-05

4. Computer simulation of the operation of transistors and semiconductor devices based on it;Modeling of systems and processes;2023-03-29

5. Simulation of diode operation and evaluation of its operation parameters;Modeling of systems and processes;2023-03-29

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