A 28 GHz 8 × 8 Gapwaveguide Phased Array Employing GaN Front-End With 60 dBm EIRP
Author:
Affiliation:
1. Gapwaves AB, Gothenburg, Sweden
2. Department of Electrical Engineering, University of Twente, Enschede, The Netherlands
Funder
European Union Horizon 2020 Research and Innovation Program under the Marie Skłodowska-Curie
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/8/10116028/10036379.pdf?arnumber=10036379
Reference29 articles.
1. Down With Noise: An Introduction to a Low-Noise Amplifier Survey
2. A 28 GHz 480 elements digital AAS using GaN HEMT amplifiers with 68 dBm EIRP for 5G long-range base station applications
3. Gapwaves platform integrates 5G mmWave arrays;bencivenni;Microw J,2019
4. A 24-29.5 GHz 256-Element 5G Phased-Array with 65.5 dBm Peak EIRP and 256-QAM Modulation
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