Enhancement of Johnson figure of merit in III‐V HEMT combined with discrete field plate and AlGaN blocking layer-Reference-Cited by-同舟云学术

Enhancement of Johnson figure of merit in III‐V HEMT combined with discrete field plate and AlGaN blocking layer

Published:2019-11-13 Issue:2 Volume:30 Page:
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF Microw Comput Aided Eng

Author:

Augustine Fletcher A. S.¹,Nirmal D.¹,Arivazhagan L.¹,Ajayan J.²^ORCID,Varghese Arathy³

Affiliation:

1. Department of Electronics and Communication EngineeringKarunya Institute of Technology and Sciences Coimbatore Tamilnadu India

2. Department of Electronics and Communication EngineeringSNS College of Technology Coimbatore Tamilnadu India

3. Department of Electronics and CommunicationMalaviya National Institute of Technology Jaipur Rajasthan India

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Link

Reference38 articles.

2. The 2018 GaN power electronics roadmap;Amano H;J Appl Phys,2018

4. SiNx/InAlN/AlN/GaN MIS‐HEMTs with 10.8 THz·V Johnson figure of merit;Brian P;IEEE Elect Dev Lett,2014

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